Transistor 2T208M

2T208M

Transistors 2T208M silicon epitaxial planar pnp structure.
Designed for use in amplifiers and pulse devices.
Produced in metal packages with flexible leads.
Type of device indicated on the package.
transistor Weight not more than 0.6 g
Body type: KT - 1 - 7.
Specifications: YUF3.365.035TU.
The main technical characteristics of the transistor 2T208M:
• The structure of transistor: pnp
• Pk max - Constant collector dissipation power: 200 mVt -
• fgr - cutoff frequency of the transistor current gain for common - emitter circuit: not less than 5 MGts -
• Ukbo max - The maximum collector - base voltage at a predetermined reverse current collector and emitter open circuit 60 B -
• Uebo max - maximum voltage of the emitter - base reverse current at a given emitter and open collector circuit 20 B -
• Ik max - The maximum permissible DC Collector Current: 150 mA -
• Ikbo - Reverse current collector - the current through the collector junction reverse voltage for a given collector - base and emitter deriving open: not more than 1 pA ( - 20V) -
• h21e - Static transistor current gain in the small signal regime for circuits with a common emitter: 40 . . . 120
• Cc - The capacity of the collector junction: no more than 50 pF
• Rke us - saturation resistance between the collector and emitter: 1.3 ohms

 

Characteristics 2T208A transistors 2T208B, 2T208V, 2T208G, 2T208D, 2T208E, 2T208ZH, 2T208I, 2T208K, 2T208L, 2T208M:

A type transistor	Structure	Limit values for parameters when T = 25 ° C						Parameter values at T = 25 ° C								T P max	T max
		I K max	I KI max	U CE R max	U CB 0 max	U EB 0 max	P K max	h21E	U CE us.	I CCD	I DLE	f RING.	For W	From To	With e
		mA	mA	IN	IN	IN	mW		IN	uA	uA	MHz	dB	pF	pF	° C	° C
2T208A	pnp	150	300	20	20	20	200	20 . . . 60	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208B	pnp	150	300	20	20	20	200	40 . . . 120	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208V	pnp	150	300	20	20	20	200	20 . . . 240	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208G	pnp	150	300	thirty	thirty	20	200	20 . . . 60	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208D	pnp	150	300	thirty	thirty	20	200	40 . . . 120	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208E	pnp	150	300	thirty	thirty	20	200	20 . . . 240	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208ZH	pnp	150	300	45	45	20	200	20 . . . 60	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208I	pnp	150	300	45	45	20	200	40 . . . 120	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208K	pnp	150	300	45	45	20	200	20 . . . 240	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208L	pnp	150	300	60	60	20	200	20 . . . 60	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125
2T208M	pnp	150	300	60	60	20	200	40 . . . 120	0.3	1	1	& Gt - 5	-	35	20	150	- 60 . . . + 125

Symbols of the electrical parameters of transistors:
• I of K max - the maximum continuous current of the transistor collector.
• I of KI max - the maximum pulse current of the transistor collector.
• U TBE R max - maximum voltage between the collector and emitter at a given current collector and the resistance in the base - emitter circuit.
• U TBE 0 max - the maximum voltage between the collector and emitter of the transistor at a given current collector and base current, equal to zero.
• U CB 0 max - maximum collector - base voltage at a given current collector and an emitter current equal to zero.
• U EB 0 max - maximum constant emitter - base voltage at a collector current equal to zero.
• P K max - the maximum allowable continuous power dissipation in the transistor collector.
• h21E - static current gain of the bipolar transistor.
• the U CE us. - the saturation voltage between the collector and emitter of the transistor.
• I CCD - reverse current collector. The current through the collector junction reverse voltage at a specified collector - base and emitter terminal open.
• I EBE - reverse emitter current. The current through the emitter junction reverse voltage for a given emitter - base and open collector output.
• f c - cutoff frequency current transfer coefficient.
• K W - transistor noise ratio.
• With K - the capacity of the collector junction.
• With E - capacity of the collector junction.
• T P max & nbsp - - maximum permissible junction temperature.
• T max & nbsp - - maximum allowable ambient temperature.