Technical characteristics
- BrandЭлектроника и связь
- Country of manufactureRussia
Description
Tiristora silicon KH102B, diffusive, structures of p-n-p-n, diode.
Are intended for application in pulse devices as the switching elements.
Are issued in the metalglass case with flexible conclusions.
The type of the device is given on the case.
The mass of a tiristor is no more than 2 g.
Key technical parameters of a tiristor KH102B:
• Maximum constant return tension: 10 V,
• The maximum constant tension in the closed state: 10 V,
• The maximum repeating pulse current abroach: 10 A,
• Average pulse current abroach: 0,2 A,
• Tension abroach: no more than 1,5 In,
• Not unlocking constant tension of management: 4 B,
• A direct current in the closed state: no more than 0,08 ma,
• Direct return current: no more than 0,5 ma,
• The constant unlocking tension of management: 40 V,
• Switching off time: no more than 40 microsec,
• Working interval of ambient temperature:-60... 125 °C
Are intended for application in pulse devices as the switching elements.
Are issued in the metalglass case with flexible conclusions.
The type of the device is given on the case.
The mass of a tiristor is no more than 2 g.
Key technical parameters of a tiristor KH102B:
• Maximum constant return tension: 10 V,
• The maximum constant tension in the closed state: 10 V,
• The maximum repeating pulse current abroach: 10 A,
• Average pulse current abroach: 0,2 A,
• Tension abroach: no more than 1,5 In,
• Not unlocking constant tension of management: 4 B,
• A direct current in the closed state: no more than 0,08 ma,
• Direct return current: no more than 0,5 ma,
• The constant unlocking tension of management: 40 V,
• Switching off time: no more than 40 microsec,
• Working interval of ambient temperature:-60... 125 °C
Under the order, 14 days.
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Tiristor KH102B
