Technical characteristics
- BrandЭлектроника и связь
- Country of manufactureRussia
Description
AOT165B-1
Dual optopara with the transistor of Darlington.
Optopara of AOT165B-1 consists of crystals of infrared AsGaAl of a light-emitting diode and silicon compound n-p-n of the phototransistor.
Crystals are located in one plane, optically are connected by the hemispherical light guide.
Such design provides lack of field leaks at the long Uiz appendix.
Internal interconnections are executed by a gold wire.
Case type: DIP-4 2101.4-1.
Specifications: TU ADBK.432220.725.
Dual optopara with the transistor of Darlington.
Optopara of AOT165B-1 consists of crystals of infrared AsGaAl of a light-emitting diode and silicon compound n-p-n of the phototransistor.
Crystals are located in one plane, optically are connected by the hemispherical light guide.
Such design provides lack of field leaks at the long Uiz appendix.
Internal interconnections are executed by a gold wire.
Case type: DIP-4 2101.4-1.
Specifications: TU ADBK.432220.725.
Under the order, 14 days.
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Optopara AOT165B-1
