Technical characteristics
- BrandЭлектроника и связь
- Country of manufactureRussia
Description
Optopara transistor AOT128D, consisting of the radiating diode on the basis of connection gallium-aluminum-arsenic and silicon phototransistors.
Are intended for contactless switching of a direct current with a galvanic outcome between an entrance and an exit.
Are issued in the plastic case.
Mass of the device no more than 1 g.
Case type: DIP-6 2101.6-1.
Specifications: aa0.336.468 TU/2.
Key technical parameters of a transistor optopara AOT128D:
• Entrance tension: no more than 1,6 In,
• Output residual tension: no more than 0,4 In,
• Leak current at the exit: no more than 10 mk,
• Isolation resistance: not less than 100 GOM,
• Time of increase of an output signal: 5 nanoseconds,
• Time of recession of an output signal: 5 nanoseconds,
• Maximum entrance current: 40 ma,
• Maximum pulse entrance current: 100 ma,
• Maximum entrance return tension: 0,5 B,
• The maximum switched tension at the exit: 15 V,
• Maximum output current: 32 ma,
• Maximum tension of isolation: 1500 V
Are intended for contactless switching of a direct current with a galvanic outcome between an entrance and an exit.
Are issued in the plastic case.
Mass of the device no more than 1 g.
Case type: DIP-6 2101.6-1.
Specifications: aa0.336.468 TU/2.
Key technical parameters of a transistor optopara AOT128D:
• Entrance tension: no more than 1,6 In,
• Output residual tension: no more than 0,4 In,
• Leak current at the exit: no more than 10 mk,
• Isolation resistance: not less than 100 GOM,
• Time of increase of an output signal: 5 nanoseconds,
• Time of recession of an output signal: 5 nanoseconds,
• Maximum entrance current: 40 ma,
• Maximum pulse entrance current: 100 ma,
• Maximum entrance return tension: 0,5 B,
• The maximum switched tension at the exit: 15 V,
• Maximum output current: 32 ma,
• Maximum tension of isolation: 1500 V
Under the order, 14 days.
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Optopara AOT128D
