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Optopara AOT128D – Elektro Mag |
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Optopara AOT128D

Optopara AOT128D

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  • Nova Poshta
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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Optopara transistor AOT128D, consisting of the radiating diode on the basis of connection gallium-aluminum-arsenic and silicon phototransistors.

Are intended for contactless switching of a direct current with a galvanic outcome between an entrance and an exit.

Are issued in the plastic case.

Mass of the device no more than 1 g.

Case type: DIP-6 2101.6-1.

Specifications: aa0.336.468 TU/2.

Key technical parameters of a transistor optopara AOT128D:

• Entrance tension: no more than 1,6 In,

• Output residual tension: no more than 0,4 In,

• Leak current at the exit: no more than 10 mk,

• Isolation resistance: not less than 100 GOM,

• Time of increase of an output signal: 5 nanoseconds,

• Time of recession of an output signal: 5 nanoseconds,

• Maximum entrance current: 40 ma,

• Maximum pulse entrance current: 100 ma,

• Maximum entrance return tension: 0,5 B,

• The maximum switched tension at the exit: 15 V,

• Maximum output current: 32 ma,

• Maximum tension of isolation: 1500 V

Under the order, 14 days.

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