Technical characteristics
- BrandЭлектроника и связь
- Country of manufactureRussia
Description
Optopara transistor AOT127A, consisting of the radiating diode on the basis of connection gallium-aluminum-arsenic and the silicon phototransistor.
Are intended for contactless switching of a direct current with a galvanic outcome between an entrance and an exit.
The mass of the device is no more than 2 g.
Specifications: aa0.336.467. TU/2.
Key technical parameters of a transistor optopara AOT127A:
• Entrance tension: no more than 1,6 In,
• Output residual tension: no more than 1,5 In,
• Leak current at the exit: no more than 10 mk,
• Isolation resistance: not less than 100 GOM,
• Time of increase of an output signal: 10 microsec,
• Time of recession of an output signal: 100 microsec,
• Maximum entrance current: 15 ma,
• The maximum switched tension at the exit: 30 V,
• Maximum output current: 70 ma,
• Maximum tension of isolation: 500 V,
• The maximum average disseminated power: 225 MW
Are intended for contactless switching of a direct current with a galvanic outcome between an entrance and an exit.
The mass of the device is no more than 2 g.
Specifications: aa0.336.467. TU/2.
Key technical parameters of a transistor optopara AOT127A:
• Entrance tension: no more than 1,6 In,
• Output residual tension: no more than 1,5 In,
• Leak current at the exit: no more than 10 mk,
• Isolation resistance: not less than 100 GOM,
• Time of increase of an output signal: 10 microsec,
• Time of recession of an output signal: 100 microsec,
• Maximum entrance current: 15 ma,
• The maximum switched tension at the exit: 30 V,
• Maximum output current: 70 ma,
• Maximum tension of isolation: 500 V,
• The maximum average disseminated power: 225 MW
Under the order, 14 days.
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Optopara AOT127A
