Technical characteristics
- BrandЭлектроника и связь
- Country of manufactureRussia
Description
Optopara transistor AOT123G, consisting of the radiating diode on the basis of connection gallium-aluminum-arsenic and the silicon phototransistor.
Are intended for application in the key mode. Between conclusions 3 and 5 the resistor with a resistance of 100 kOhm has to be connected.
Are issued in the metalglass case.
The mass of the device is no more than 2 g.
Specifications: aa0.336.416 TU.
Key technical parameters of a transistor optopara AOT123G:
• Entrance tension: no more than 2 V,
• Output residual tension: no more than 0,5 In,
• Leak current at the exit: no more than 10 mk,
• Isolation resistance: not less than 1 GOM,
• Time of increase of an output signal: 2 microsec,
• Time of recession of an output signal: 2 microsec,
• Maximum entrance current: 30 ma,
• Maximum pulse entrance current: 100 ma,
• The maximum switched tension at the exit: 15 V,
• Maximum output current: 20 ma,
• Maximum tension of isolation: 100 V
Are intended for application in the key mode. Between conclusions 3 and 5 the resistor with a resistance of 100 kOhm has to be connected.
Are issued in the metalglass case.
The mass of the device is no more than 2 g.
Specifications: aa0.336.416 TU.
Key technical parameters of a transistor optopara AOT123G:
• Entrance tension: no more than 2 V,
• Output residual tension: no more than 0,5 In,
• Leak current at the exit: no more than 10 mk,
• Isolation resistance: not less than 1 GOM,
• Time of increase of an output signal: 2 microsec,
• Time of recession of an output signal: 2 microsec,
• Maximum entrance current: 30 ma,
• Maximum pulse entrance current: 100 ma,
• The maximum switched tension at the exit: 15 V,
• Maximum output current: 20 ma,
• Maximum tension of isolation: 100 V
Under the order, 14 days.
Similar company products
Contact the seller
Optopara AOT123G
