Technical characteristics
- BrandЭлектроника и связь
- Country of manufactureRussia
Description
Optopara transistor AOT110G, consisting of the radiating diode on the basis of connection arsenic-gallium-aluminum and the compound silicon phototransistor.
Are intended for use as the switch in galvanic untied electric chains of the radio-electronic equipment.
Are issued in the metal case.
The mass of the device is no more than 1,5 g.
Specifications: aa0.336.260 TU.
Key technical parameters of a transistor optopara AOT110G:
• Entrance tension: no more than 2 V,
• Output residual tension: no more than 1,5 In,
• Leak current at the exit: no more than 110 mk,
• Isolation resistance: not less than 1 GOM,
• Maximum entrance current: 30 ma,
• Maximum pulse entrance current: 100 ma,
• Maximum entrance return tension: 0,7 B,
• The maximum switched tension at the exit: 15 V,
• Maximum output current: 200 ma,
• Maximum tension of isolation: 100 V,
• The maximum average disseminated power: 360 MW
Are intended for use as the switch in galvanic untied electric chains of the radio-electronic equipment.
Are issued in the metal case.
The mass of the device is no more than 1,5 g.
Specifications: aa0.336.260 TU.
Key technical parameters of a transistor optopara AOT110G:
• Entrance tension: no more than 2 V,
• Output residual tension: no more than 1,5 In,
• Leak current at the exit: no more than 110 mk,
• Isolation resistance: not less than 1 GOM,
• Maximum entrance current: 30 ma,
• Maximum pulse entrance current: 100 ma,
• Maximum entrance return tension: 0,7 B,
• The maximum switched tension at the exit: 15 V,
• Maximum output current: 200 ma,
• Maximum tension of isolation: 100 V,
• The maximum average disseminated power: 360 MW
Under the order, 14 days.
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Optopara AOT110G
