Technical characteristics
- BrandЭлектроника и связь
- Country of manufactureRussia
Description
Optopara transistor 3OT126A, consisting of the radiating diode on the basis of connection gallium-aluminum-arsenic and the silicon phototransistor.
Are intended for contactless switching of a direct current with a galvanic outcome between an entrance and an exit.
Are issued in the metalglass case with flexible conclusions.
The mass of the device is no more than 2 g.
Specifications: aa0.339.241 TU.
Key technical parameters of a transistor optopara 3OT126A:
• Entrance tension: no more than 2 V,
• Output residual tension: no more than 0,3 In,
• Leak current at the exit: no more than 10 mk,
• Isolation resistance: not less than 100 GOM,
• Time of increase of an output signal: 2 nanoseconds,
• Time of recession of an output signal: 2 nanoseconds,
• Maximum entrance current: 30 ma,
• Maximum pulse entrance current: 100 ma,
• Maximum entrance return tension: 0,5 B,
• The maximum switched tension at the exit: 30 V,
• Maximum output current: 10 ma,
• Maximum tension of isolation: 1000 V
Are intended for contactless switching of a direct current with a galvanic outcome between an entrance and an exit.
Are issued in the metalglass case with flexible conclusions.
The mass of the device is no more than 2 g.
Specifications: aa0.339.241 TU.
Key technical parameters of a transistor optopara 3OT126A:
• Entrance tension: no more than 2 V,
• Output residual tension: no more than 0,3 In,
• Leak current at the exit: no more than 10 mk,
• Isolation resistance: not less than 100 GOM,
• Time of increase of an output signal: 2 nanoseconds,
• Time of recession of an output signal: 2 nanoseconds,
• Maximum entrance current: 30 ma,
• Maximum pulse entrance current: 100 ma,
• Maximum entrance return tension: 0,5 B,
• The maximum switched tension at the exit: 30 V,
• Maximum output current: 10 ma,
• Maximum tension of isolation: 1000 V
Under the order, 14 days.
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Optopara 3OT126A
