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Optopara 3OT123A – Elektro Mag |
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Optopara 3OT123A

Optopara 3OT123A

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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia

Optopara transistor 3OT123A, consisting of the radiating diode on the basis of connection gallium-aluminum-arsenic and the silicon phototransistor.

Are intended for application in the key mode. Between conclusions 3 and 5 the resistor with a resistance of 100 kOhm has to be connected.

Are issued in the metalglass case.

The mass of the device is no more than 2 g.

Specifications: aa0.339.201tu, P0.070.052.

Key technical parameters of a transistor optopara 3OT123A:

• Entrance tension: no more than 2 V,

• Output residual tension: no more than 0,3 In,

• Leak current at the exit: no more than 10 mk,

• Isolation resistance: not less than 1 GOM,

• Time of increase of an output signal: 4 microsec,

• Time of recession of an output signal: 4 microsec,

• Maximum entrance current: 30 ma,

• Maximum pulse entrance current: 100 ma,

• The maximum switched tension at the exit: 50 V,

• Maximum output current: 10 ma,

• Maximum tension of isolation: 100 V

Under the order, 14 days.

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