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Optopara 3OT122A – Elektro Mag |
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Optopara 3OT122A

Optopara 3OT122A

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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Optopara transistor 3OT122A, consisting of the radiating arsenido-gallium diode and the silicon phototransistor.

Are intended for contactless switching of chains of a direct current with a galvanic outcome between an entrance and an exit.

Are issued in the metalglass case with flexible conclusions.

The type of the device is given on the case.

The mass of an optopara is no more than 0,6 g.

Specifications: aa0.339.200 TU.

Key technical parameters of a transistor optopara 3OT122A:

• Entrance tension: no more than 1,6 In,

• Output residual tension: no more than 1,5 In,

• Leak current at the exit: no more than 10 mk,

• Isolation resistance: not less than 1 GOM,

• Time of increase of an output signal: 6 microsec,

• Time of recession of an output signal: 100 microsec,

• Maximum entrance current: 5 ma,

• Maximum pulse entrance current: 85 ma,

• The maximum switched tension at the exit: 50 V,

• Maximum output current: 15 ma,

• Maximum tension of isolation: 100 V

Under the order, 14 days.

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