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Optopara 3OT110A – Elektro Mag |
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Optopara 3OT110A

Optopara 3OT110A

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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Optopara transistor 3OT110A, consisting of the radiating diode on the basis of connection arsenic-gallium-aluminum and the compound silicon phototransistor.

Are intended for use as the switch in galvanic untied electric chains of the radio-electronic equipment.

Are issued in the metal case.

The mass of the device is no more than 1,5 g.

Specifications: aa0.339.064tu, P0.070.052.

Key technical parameters of a transistor optopara 3OT110A:

• Entrance tension: no more than 2 V,

• Output residual tension: no more than 1,5 In,

• Leak current at the exit: no more than 110 mk,

• Isolation resistance: not less than 1 GOM,

• Maximum entrance current: 30 ma,

• Maximum pulse entrance current: 100 ma,

• Maximum entrance return tension: 0,7 B,

• The maximum switched tension at the exit: 30 V,

• Maximum output current: 200 ma,

• Maximum tension of isolation: 100 V,

• The maximum average disseminated power: 360 MW

Under the order, 14 days.

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