IGBT MIFA-xx17FA-100N module

The IGBT module (the bipolar transistor with the isolated lock / BTIZ) is the combined transistor consisting of the managing director of MOSFET and the output bipolar cascade. Such devices allow to unite most successfully all features of the field and bipolar transistors working in the key mode.
Features of chips:
IGBT chip
— Trench FS — V-Series IGBT (Fuji chips of the 6th generation)
— low U CE(sat) value
— duration of KZ is 10 microsec at 150 °C
— the square RBSOA area at 2xI C
— low EMI
FRD chip
— bystry and soft restoration
— low power failure
Features of a design:
— copper basis
— Substrate Al2O3 DBC
— ultrasonic welding of power conclusions
— the improved resistance to thermocycling
— compliance of RoHS
Standard Application:
— drives of engines of alternating current
— converters on the basis of solar batteries
— air conditioning systems
— converters of high power and UPS
Brand: Proton-Elektroteks
Manufacturing country: Russia
Transistor type: Bipolar

Name	MIFA-xx17FA-100N
UTM (Tc=25ºC) [In]	175
Case type	MIFA
UCES [B]	1700
ICnom [A]	100
Uisol [B]	4000
Dimensions (width/length) of [mm]	34/94