Technical characteristics
- BrandЭлектроника и связь
- Country of manufactureRussia
Description
FD-307
Photo diode silicon.
It is intended for application as receivers and sensors of infrared radiation as a part of the optical-electronic equipment, systems of photo-electric automatic equipment and contactless measurement of temperature, computer and measuring facilities, the program-controlled equipment and devices working in the range of lengths of waves from 0,25 to 1,05 microns.
Key technical parameters of the FD-307 photo diode:
• Size of a photosensitive element: 8 mm2,
• Area of spectral photosensitivity: 0,25... 1,5 microns,
• Wavelength of a maximum of spectral distribution of photosensitivity: 0,8 microns,
• Rated working voltage: 0,01 Century.
Photo diode silicon.
It is intended for application as receivers and sensors of infrared radiation as a part of the optical-electronic equipment, systems of photo-electric automatic equipment and contactless measurement of temperature, computer and measuring facilities, the program-controlled equipment and devices working in the range of lengths of waves from 0,25 to 1,05 microns.
Key technical parameters of the FD-307 photo diode:
• Size of a photosensitive element: 8 mm2,
• Area of spectral photosensitivity: 0,25... 1,5 microns,
• Wavelength of a maximum of spectral distribution of photosensitivity: 0,8 microns,
• Rated working voltage: 0,01 Century.
Under the order, 14 days.
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FD-307 photo diode
